BSC070N10NS3GATMA1
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см. техническую документацию
см. техническую документацию
2 510 ֏
от 2 шт. —
2 040 ֏
от 5 шт. —
1 740 ֏
Добавить в корзину 1 шт.
на сумму 2 510 ֏
Описание
Электроэлемент
MOSFET, N CH, 100V, 90A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V;
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 36 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 90 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Cut Tape |
| Part # Aliases | BSC070N10NS3 BSC070N10NS3GXT G SP000778082 |
| Pd - Power Dissipation | 114 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 55 nC |
| Rds On - Drain-Source Resistance | 6.3 mOhms |
| Rise Time | 10 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 29 ns |
| Typical Turn-On Delay Time | 15 ns |
| Unit Weight | 0.010582 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 36 S |
| Id - Continuous Drain Current: | 90 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC070N10NS3 G SP000778082 |
| Pd - Power Dissipation: | 114 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 42 nC |
| Rds On - Drain-Source Resistance: | 7 mOhms |
| Rise Time: | 10 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 29 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 8.6 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 156 W |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet
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Datasheet BSC070N10NS3GATMA1
pdf, 434 КБ
