VN0106N3-G, Транзистор МОП n-канальный, 60В, 2А, 1Вт, TO92, Канал обогащенный
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680 ֏
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550 ֏
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Описание
Trans MOSFET N-CH Si 60V 0.35A 3-Pin TO-92 Bag
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Material | Si |
Maximum Continuous Drain Current (A) | 0.35 |
Maximum Drain Source Resistance (mOhm) | 3000@10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.4 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 1000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Packaging | Bag |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | DMOS |
Product Category | Power MOSFET |
Standard Package Name | TO |
Supplier Package | TO-92 |
Typical Fall Time (ns) | 5 |
Typical Input Capacitance @ Vds (pF) | 55@25V |
Typical Output Capacitance (pF) | 20 |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 6 |
Typical Turn-On Delay Time (ns) | 3 |
Maximum Drain Source Voltage | 60 V |
Mounting Type | Through Hole |
Package Type | TO-92 |
Вес, г | 0.22 |
Техническая документация
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