CSD19501KCS, Транзистор: N-MOSFET, полевой, 80В, 100А, 217Вт, TO220-3
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Описание
Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N THT
Описание Транзистор: N-MOSFET, полевой, 80В, 100А, 217Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Base Product Number | CSD19501 -> |
Current - Continuous Drain (Id) @ 25В°C | 100A (Ta) |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 40V |
Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 217W (Tc) |
Rds On (Max) @ Id, Vgs | 6.6mOhm @ 60A, 10V |
REACH Status | REACH Affected |
RoHS Status | ROHS3 Compliant |
Series | NexFETв„ў -> |
Supplier Device Package | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 3.2V @ 250ВµA |
Brand | Texas Instruments |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 5 ns |
Forward Transconductance - Min | 137 S |
Height | 16.51 mm |
Id - Continuous Drain Current | 100 A |
Length | 10.67 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Packaging | Tube |
Pd - Power Dissipation | 217 W |
Product Category | MOSFET |
Qg - Gate Charge | 38 nC |
Rds On - Drain-Source Resistance | 6.6 mOhms |
Rise Time | 15 ns |
RoHS | Details |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Unit Weight | 0.211644 oz |
Vds - Drain-Source Breakdown Voltage | 80 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.6 V |
Width | 4.7 mm |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 5 ns |
Forward Transconductance - Min: | 137 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 217 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 38 nC |
Rds On - Drain-Source Resistance: | 6.6 mOhms |
Rise Time: | 15 ns |
Series: | CSD19501KCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
Вес, г | 2 |
Техническая документация
Datasheet CSD19501KCS
pdf, 781 КБ