Категория	Транзистор
Тип	полевой
Вид	MOSFET

Корпус	to252
кол-во в упаковке	2500
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	1 A
Maximum Drain Source Resistance	8.5 Ω
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	3.7V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	30 W
Minimum Gate Threshold Voltage	2.25V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	7 nC @ 10 V
Width	6.2mm
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	1
Maximum Drain Source Resistance (mOhm)	8500@10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	30000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
PPAP	No
Process Technology	SuperMESH
Product Category	Power MOSFET
Standard Package Name	TO-252
Supplier Package	DPAK
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	25
Typical Gate Charge @ 10V (nC)	7
Typical Gate Charge @ Vgs (nC)	7@10V
Typical Input Capacitance @ Vds (pF)	156@25V
Typical Rise Time (ns)	5
Typical Turn-Off Delay Time (ns)	19
Typical Turn-On Delay Time (ns)	6.5
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	25 ns
Forward Transconductance - Min:	1 S
Id - Continuous Drain Current:	1 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3(TO-252-3)
Pd - Power Dissipation:	30 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7 nC
Rds On - Drain-Source Resistance:	8.5 Ohms
Rise Time:	5 ns
Series:	STD1NK60T4
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel MOSFET
Type:	MOSFET
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	6.5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	2.25 V
Brand	STMicroelectronics
Factory Pack Quantity	2500
Fall Time	25 ns
Forward Transconductance - Min	1 S
Height	2.4 mm
Id - Continuous Drain Current	1 A
Length	6.6 mm
Manufacturer	STMicroelectronics
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Pd - Power Dissipation	30 W
Qg - Gate Charge	7 nC
Rds On - Drain-Source Resistance	8 Ohms
Rise Time	5 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	6.5 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Вес, г	0.6

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STD1NK60T4

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