UCC27712D

UCC27712D
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см. техническую документацию
1 790 ֏
от 2 шт.1 360 ֏
от 5 шт.1 080 ֏
от 10 шт.980 ֏
Добавить в корзину 1 шт. на сумму 1 790 ֏
Номенклатурный номер: 8002949591
Бренд: Texas Instruments

Описание

Электроэлемент
MOSFET/IGBT DRIVER, HIGH/LOW SIDE, SOIC8; Driver Configuration:High Side and Low Side; Peak Output Current:2.8A; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:SOIC; No. of Pins:8Pins; Input Delay:-; O

Технические параметры

Channel Type Synchronous
Current - Peak Output (Source, Sink) 1.8A, 2.8A
Driven Configuration High-Side or Low-Side
Gate Type IGBT, N-Channel, P-Channel MOSFET
High Side Voltage - Max (Bootstrap) 700V
Logic Voltage - VIL, VIH 0.8V, 2.4V
Manufacturer Texas Instruments
Mounting Type Surface Mount
Number of Drivers 2
Operating Temperature -40В°C ~ 125В°C(TA)
Package / Case 8-SOIC(0.154", 3.90mm Width)
Packaging Tube
Part Status Active
Rise / Fall Time (Typ) 16ns, 10ns
Standard Package 75
Supplier Device Package 8-SOIC
Voltage - Supply 10 V ~ 20 V
Brand: Texas Instruments
Development Kit: UCC27712EVM-287
Factory Pack Quantity: Factory Pack Quantity: 75
Fall Time: 10 ns
Features: Interlock
Manufacturer: Texas Instruments
Maximum Operating Temperature: +125 C
Maximum Turn-Off Delay Time: 45 ns
Maximum Turn-On Delay Time: 45 ns
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Drivers: 2 Driver
Number of Outputs: 2 Output
Operating Supply Current: 3.8 mA
Output Current: 2.8 A
Package / Case: SOIC-8
Packaging: Tube
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: IGBT, MOSFET Gate Drivers
Rise Time: 16 ns
Series: UCC27712
Shutdown: Shutdown
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 20 V
Supply Voltage - Min: 10 V
Technology: Si
Type: High-Side, Low-Side
Вес, г 0.52

Техническая документация

Datasheet UCC27712D
pdf, 1561 КБ