2N5550TFR
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см. техническую документацию
см. техническую документацию
510 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
243 ֏
от 10 шт. —
183 ֏
Добавить в корзину 2 шт.
на сумму 1 020 ֏
Описание
Электроэлемент
Transistor GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R - Bulk (Alt: 2N5550TFR)
Технические параметры
| Category | Bipolar Small Signal |
| Collector Current (DC) | 0.6(A) |
| Collector-Base Voltage | 160(V) |
| Configuration | Single |
| DC Current Gain | 60 |
| Emitter-Base Voltage | 6(V) |
| Frequency | 300(MHz) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Package Type | TO-92 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Power Dissipation | 0.625(W) |
| Rad Hardened | No |
| Transistor Polarity | NPN |
| Brand: | onsemi/Fairchild |
| Collector- Base Voltage VCBO: | 160 V |
| Collector- Emitter Voltage VCEO Max: | 140 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Configuration: | Single |
| Continuous Collector Current: | 600 mA |
| DC Collector/Base Gain hfe Min: | 60 |
| DC Current Gain hFE Max: | 250 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 Kinked Lead |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | 2N5550TFR_NL |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2N5550 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Maximum Collector Base Voltage | 160 V |
| Maximum Collector Emitter Voltage | 140 V |
| Maximum DC Collector Current | 600 mA |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 300 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 625 mW |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Minimum DC Current Gain | 50 |
| Вес, г | 0.24 |
