FQN1N50C
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см. техническую документацию
см. техническую документацию
850 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
640 ֏
от 10 шт. —
560 ֏
Добавить в корзину 2 шт.
на сумму 1 700 ֏
Описание
Электроэлемент
Small Signal Field-Effect Transistor, 0.38A, 500V, N-Channel, MOSFET, TO-92
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 0.6 S |
| Id - Continuous Drain Current: | 380 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Ammo Pack |
| Pd - Power Dissipation: | 890 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 6.4 nC |
| Rds On - Drain-Source Resistance: | 4.6 Ohms |
| Rise Time: | 10 ns |
| Series: | FQN1N50C |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.3 |
Техническая документация
Datasheet
pdf, 1424 КБ
Datasheet FQN1N50C
pdf, 1273 КБ
