CPH5506-TL-E
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см. техническую документацию
см. техническую документацию
1 620 ֏
от 2 шт. —
1 240 ֏
от 5 шт. —
980 ֏
от 10 шт. —
870 ֏
Добавить в корзину 1 шт.
на сумму 1 620 ֏
Описание
Электроэлемент
Bipolar Transistor Array, NPN, PNP, 30 V, 1.5 A, 1.2 W, 200 hFE, SOT-25
Технические параметры
| Current - Collector (Ic) (Max) | 1.5A |
| Current - Collector Cutoff (Max) | 100nA(ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 500MHz, 450MHz |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 1.2W |
| Series | - |
| Supplier Device Package | 5-CPH |
| Transistor Type | NPN, PNP(Emitter Coupled) |
| Vce Saturation (Max) @ Ib, Ic | 225mV @ 15mA, 750mA/375mV @ 15mA, 750mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Brand: | onsemi |
| Collector- Base Voltage VCBO: | 40 V, 30 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 150 mV, 250 mV |
| Configuration: | Dual |
| Continuous Collector Current: | 1.5 A |
| DC Collector/Base Gain hfe Min: | 200 |
| DC Current Gain hFE Max: | 560 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 500 MHz, 450 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | CPH-5 |
| Pd - Power Dissipation: | 1.2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | CPH5506 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN, PNP |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 774 КБ
