KSD1616AGBU

KSD1616AGBU
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560 ֏
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Номенклатурный номер: 8002990188

Описание

Электроэлемент
TRANSISTOR, BIPOL, NPN, 60V, TO-226AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:750mW; DC Collector Current:1A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-226AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

Технические параметры

Category Bipolar Power
Collector Current (DC) 1(A)
Collector-Base Voltage 120(V)
Configuration Single
DC Current Gain 200@100MA@2V
Emitter-Base Voltage 6(V)
Frequency 160(MHz)
Mounting Through Hole
Number of Elements 1
Operating Temp Range -55C to 150C
Operating Temperature Classification Military
Output Power Not Required(W)
Package Type TO-92
Packaging Bag
Pin Count 3
Power Dissipation 0.75(W)
Rad Hardened No
Transistor Polarity NPN
Brand: onsemi/Fairchild
Collector- Base Voltage VCBO: 120 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 150 mV
Configuration: Single
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 135
DC Current Gain hFE Max: 600
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 10000
Gain Bandwidth Product fT: 160 MHz
Manufacturer: onsemi
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: +150 C
Mounting Style: Through Hole
Package / Case: TO-92-3
Packaging: Bulk
Part # Aliases: KSD1616AGBU_NL
Pd - Power Dissipation: 750 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: KSD1616A
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 0.179

Техническая документация

Datasheet
pdf, 293 КБ
Документация
pdf, 293 КБ