STW65N65DM2AG

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1 шт. с центрального склада, срок 3 недели

14 900 ֏

Добавить в корзину 1 шт. на сумму 14 900 ֏

Номенклатурный номер: 8003226565

Электроэлемент

Trans MOSFET N-CH 650V 60A Automotive 3-Pin(3+Tab) TO-247 Tube

Current - Continuous Drain (Id) @ 25В°C	60A(Tc)
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 100V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-247-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	446W(Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 30A, 10V
Series	Automotive, AEC-Q101, MDmeshв(ў DM2
Supplier Device Package	TO-247
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±25V
Vgs(th) (Max) @ Id	5V @ 250ВµA
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	600
Fall Time:	11.5 ns
Id - Continuous Drain Current:	60 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	446 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	Power MOSFETs
Qg - Gate Charge:	27 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	50 mOhms
Rise Time:	13.5 ns
Series:	STW65N65DM2AG
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Type:	High Voltage
Typical Turn-Off Delay Time:	114 ns
Typical Turn-On Delay Time:	33 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	7.208