JANTX2N3506, Bipolar Transistors - BJT Power BJT
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Microchip/Microsemi |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | 3 A |
| DC Collector/Base Gain hFE Min: | 40 |
| DC Current Gain hFE Max: | 200 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Manufacturer: | Microchip |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-39-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 9.21 |
Техническая документация
Datasheet
pdf, 267 КБ
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