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STGP30H60DFB, IGBT Transistors Trench gate field-stop 600 V, 30 A high speed HB series IGBT

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180 шт., срок 8-10 недель

3 770 ֏

от 10 шт. — 3 500 ֏

от 25 шт. — 2 760 ֏

от 100 шт. — 2 130 ֏

Добавить в корзину 1 шт. на сумму 3 770 ֏

Альтернативные предложения1

Номенклатурный номер: 8004583835

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

HB Trench Gate Field-Stop IGBTs
STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.55 V
Configuration:	Single
Continuous Collector Current at 25 C:	60 A
Continuous Collector Current Ic Max:	60 A
Factory Pack Quantity: Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	+/-250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	260 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGP30H60DFB
Subcategory:	IGBTs
Technology:	Si
Вес, г	1.9