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CSD17501Q5A, MOSFET 30V,NCh NexFET Pwr MOSFET

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1 820 ֏

от 10 шт. — 1 520 ֏

от 100 шт. — 1 210 ֏

от 250 шт. — 1 120 ֏

Добавить в корзину 1 шт. на сумму 1 820 ֏

Номенклатурный номер: 8004997203

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	7.9 ns
Forward Transconductance - Min:	110 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	3.2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	13.2 nC
Rds On - Drain-Source Resistance:	2.9 mOhms
Rise Time:	17 ns
Series:	CSD17501Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	10.4 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.09