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CSD18511KTT, MOSFET 40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm 2-DDPAK/TO-263 -55 to 175

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см. техническую документацию

2 170 ֏

от 10 шт. — 1 690 ֏

от 100 шт. — 1 280 ֏

от 250 шт. — 1 190 ֏

Добавить в корзину 1 шт. на сумму 2 170 ֏

Номенклатурный номер: 8004997238

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	500
Fall Time:	3 ns
Forward Transconductance - Min:	249 S
Id - Continuous Drain Current:	194 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	188 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	64 nC
Rds On - Drain-Source Resistance:	3.2 mOhms
Rise Time:	6 ns
Series:	CSD18511KTT
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	3.95