CSD18533Q5AT, MOSFET 60V N-channel NexFET Power MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

1 990 ֏

от 10 шт. — 1 560 ֏

от 100 шт. — 1 170 ֏

от 250 шт. — 1 010 ֏

Добавить в корзину 1 шт. на сумму 1 990 ֏

Номенклатурный номер: 8004997252

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET, полевой, 60В, 100А, 116Вт, VSONP8, 5x6мм Характеристики

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	500
Fall Time:	2 ns
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	116 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	29 nC
Rds On - Drain-Source Resistance:	6.5 mOhms
Rise Time:	5.5 ns
Series:	CSD18533Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	5.2 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	0.02