TP2435N8-G, MOSFET 350V 15Ohm

TP2435N8-G, MOSFET 350V 15Ohm
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Номенклатурный номер: 8005187633

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
P-Channel Enhancement-Mode Vertical DMOS FET - -350V - 15 ohm - 3-lead SOT-89 - Tape&Reel - RoHS compliant

Технические параметры

Brand: Microchip Technology
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2000
Fall Time: 20 ns
Id - Continuous Drain Current: 231 mA
Manufacturer: Microchip
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: SOT-89-3
Pd - Power Dissipation: 1.6 W
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Rds On - Drain-Source Resistance: 15 Ohms
Rise Time: 20 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Type: FET
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 15 ns
Vds - Drain-Source Breakdown Voltage: 350 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
Channel Mode Enhancement
Continuous Drain Current 0.231(A)
Drain-Source On-Volt 350(V)
Gate-Source Voltage (Max) '±20(V)
Mounting Surface Mount
Number of Elements 1
Operating Temp Range -55C to 150C
Operating Temperature Classification Military
Package Type SOT-89
Packaging Tape and Reel
Pin Count 3+Tab
Polarity P
Power Dissipation 1.6(W)
Rad Hardened No
Type Power MOSFET
Вес, г 0.05

Техническая документация

Datasheet TP2435N8-G
pdf, 751 КБ
Документация
pdf, 617 КБ