TP2435N8-G, MOSFET 350V 15Ohm
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
P-Channel Enhancement-Mode Vertical DMOS FET - -350V - 15 ohm - 3-lead SOT-89 - Tape&Reel - RoHS compliant
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 2000 |
Fall Time: | 20 ns |
Id - Continuous Drain Current: | 231 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOT-89-3 |
Pd - Power Dissipation: | 1.6 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Rds On - Drain-Source Resistance: | 15 Ohms |
Rise Time: | 20 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 15 ns |
Vds - Drain-Source Breakdown Voltage: | 350 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
Channel Mode | Enhancement |
Continuous Drain Current | 0.231(A) |
Drain-Source On-Volt | 350(V) |
Gate-Source Voltage (Max) | '±20(V) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Package Type | SOT-89 |
Packaging | Tape and Reel |
Pin Count | 3+Tab |
Polarity | P |
Power Dissipation | 1.6(W) |
Rad Hardened | No |
Type | Power MOSFET |
Вес, г | 0.05 |
Техническая документация
Datasheet TP2435N8-G
pdf, 751 КБ
Документация
pdf, 617 КБ
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