TP5335K1-G, MOSFET 350V 25Ohm
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process.
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 15 ns |
Id - Continuous Drain Current: | 85 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 360 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 30 Ohms |
Rise Time: | 15 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 350 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
Channel Type | P |
Maximum Drain Source Voltage | 350 V |
Mounting Type | Through Hole |
Package Type | SOT-23 |
Вес, г | 0.01 |
Техническая документация
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