VN0106N3-G-P003, MOSFET N-CH Enhancmnt Mode MOSFET

VN0106N3-G-P003, MOSFET N-CH Enhancmnt Mode MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
1 220 ֏
от 25 шт.960 ֏
от 100 шт.810 ֏
от 1000 шт.700 ֏
Добавить в корзину 1 шт. на сумму 1 220 ֏
Номенклатурный номер: 8005187648

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Технические параметры

Brand: Microchip Technology
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2000
Fall Time: 5 ns
Id - Continuous Drain Current: 350 mA
Manufacturer: Microchip
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-92-3
Packaging: Reel, Cut Tape
Pd - Power Dissipation: 1 W
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Rds On - Drain-Source Resistance: 5 Ohms
Rise Time: 5 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 6 ns
Typical Turn-On Delay Time: 3 ns
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Вес, г 0.4536

Техническая документация

Datasheet
pdf, 594 КБ