VN2106N3-G, MOSFET 60V 4Ohm
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см. техническую документацию
см. техническую документацию
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Описание
Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Formed |
| Material | Si |
| Maximum Continuous Drain Current (A) | 0.3 |
| Maximum Drain Source Resistance (mOhm) | 4000@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Bag |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| Typical Fall Time (ns) | 5 |
| Typical Input Capacitance @ Vds (pF) | 35@25V |
| Typical Output Capacitance (pF) | 13 |
| Typical Rise Time (ns) | 5 |
| Typical Turn-Off Delay Time (ns) | 6 |
| Typical Turn-On Delay Time (ns) | 3 |
| Вес, г | 0.4536 |
Техническая документация
Datasheet
pdf, 458 КБ
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