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VN2450N8-G, MOSFET 500V 13Ohm

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1 930 ֏

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от 2000 шт. — 1 130 ֏

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Номенклатурный номер: 8005187675

Бренд: Microchip Technology

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R

Технические параметры

Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2000
Fall Time:	10 ns
Id - Continuous Drain Current:	250 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-89-3
Pd - Power Dissipation:	1.6 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	13 Ohms
Rise Time:	10 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	FET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Material	Si
Maximum Continuous Drain Current (A)	0.25
Maximum Drain Source Resistance (mOhm)	13000@10V
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1600
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	4
PPAP	No
Product Category	Power MOSFET
Supplier Package	SOT-89
Tab	Tab
Typical Fall Time (ns)	20(Max)
Typical Input Capacitance @ Vds (pF)	150(Max)@25V
Typical Rise Time (ns)	10(Max)
Typical Turn-Off Delay Time (ns)	25(Max)
Typical Turn-On Delay Time (ns)	10(Max)
Вес, г	0.05