Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Nexperia › BUK7M4R3-40HX, MOSFET BUK7M4R3-40H/ SOT1210/mLFPAK

BUK7M4R3-40HX, MOSFET BUK7M4R3-40H/ SOT1210/mLFPAK

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2088 шт., срок 8-10 недель

1 620 ֏

от 10 шт. — 1 360 ֏

от 100 шт. — 1 080 ֏

от 500 шт. — 910 ֏

Добавить в корзину 1 шт. на сумму 1 620 ֏

Номенклатурный номер: 8005274270

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

LFPAK33 Trench 9 Automotive MOSFETs Nexperia LFPAK33 Trench 9 Automotive MOSFETs are a portfolio of low RDS(on) 40V AEC-Q101 MOSFETs for modules in demanding powertrain applications. The devices are housed in the miniature, LFPAK33 package with a footprint of only 10.9mm². The LFPAK33 MOSFETs use Nexperia's Trench 9 technology. This results in a 48% reduction in RDS(on) when compared to previous devices. These devices cover a range of applications from 30W up to 300W. BUK7M3R3-40H and BUK9M3R3-40H (Standard Level and Logic Level) devices feature a 3.3mΩ RDS(on).

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1500
Id - Continuous Drain Current:	95 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	LFPAK-33-5
Part # Aliases:	934660782115
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	20 nC
Rds On - Drain-Source Resistance:	4.3 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	937