Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Texas Instruments › CSD17577Q3A, MOSFET 30V, N-channel NexFET Pwr ...

CSD17577Q3A, MOSFET 30V, N-channel NexFET Pwr MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

830 ֏

от 10 шт. — 740 ֏

от 100 шт. — 446 ֏

от 500 шт. — 359 ֏

Добавить в корзину 1 шт. на сумму 830 ֏

Номенклатурный номер: 8005540709

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	4 ns
Forward Transconductance - Min:	76 S
Id - Continuous Drain Current:	83 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	53 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	4.8 mOhms
Rise Time:	31 ns
Series:	CSD17577Q3A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	4 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	35
Maximum Drain Source Resistance - (mOhm)	4.8@10V
Maximum Drain Source Voltage - (V)	30
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	1.8
Maximum Power Dissipation - (mW)	2500
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	8
Process Technology	NexFET
Standard Package Name	SON
Supplier Package	VSONP EP
Typical Gate Charge @ 10V - (nC)	27
Typical Gate Charge @ Vgs - (nC)	13@4.5VI27@10V
Typical Input Capacitance @ Vds - (pF)	1780@15V
Вес, г	9