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CSD18563Q5AT

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Номенклатурный номер: 8005854929

Бренд: Texas Instruments

Описание

Описание Транзистор: N-MOSFET, полевой, 60В, 100А, 116Вт, VSONP8, 5x6мм Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Development Kit:	TPS40170EVM-597
Factory Pack Quantity: Factory Pack Quantity:	500
Fall Time:	1.7 ns
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	116 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15 nC
Rds On - Drain-Source Resistance:	6.8 mOhms
Rise Time:	6.3 ns
Series:	CSD18563Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Type:	NexFET Power MOSFET
Typical Turn-Off Delay Time:	11.4 ns
Typical Turn-On Delay Time:	3.2 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.7 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Material	Si
Maximum Continuous Drain Current (A)	100
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	15
Maximum Diode Forward Voltage (V)	1
Maximum Drain Source Resistance (mOhm)	6.8@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Resistance (Ohm)	3
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.4
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	3200
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.2
Maximum Pulsed Drain Current @ TC=25°C (A)	251
Minimum Gate Threshold Voltage (V)	1.7
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	NexFET
Product Category	Power MOSFET
Standard Package Name	SON
Supplier Package	VSONP EP
Typical Diode Forward Voltage (V)	0.8
Typical Fall Time (ns)	1.7
Typical Gate Charge @ 10V (nC)	15
Typical Gate Charge @ Vgs (nC)	7.3@4.5V\|15@10V
Typical Gate Plateau Voltage (V)	3
Typical Gate Threshold Voltage (V)	2
Typical Gate to Drain Charge (nC)	2.9
Typical Gate to Source Charge (nC)	3.3
Typical Input Capacitance @ Vds (pF)	1150@30V
Typical Output Capacitance (pF)	280
Typical Reverse Recovery Charge (nC)	63
Typical Reverse Recovery Time (ns)	49
Typical Reverse Transfer Capacitance @ Vds (pF)	3.9@30V
Typical Rise Time (ns)	6.3
Typical Turn-Off Delay Time (ns)	11.4
Typical Turn-On Delay Time (ns)	3.2
Вес, г	1