CSD17484F4T
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Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
N-канал 30V 3A (Ta) 500 мВт (Ta) поверхностный монтаж 3-PICOSTAR
Технические параметры
Base Product Number | CSD17484 -> |
Current - Continuous Drain (Id) @ 25В°C | 3A (Ta) |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 0.2nC @ 8V |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 15V |
Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | 3-XFDFN |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 121mOhm @ 500mA, 8V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | FemtoFETв„ў -> |
Supplier Device Package | 3-PICOSTAR |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | 12V |
Vgs(th) (Max) @ Id | 1.1V @ 250ВµA |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 4 ns |
Forward Transconductance - Min: | 4 S |
Id - Continuous Drain Current: | 3 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | PICOSTAR-3 |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 920 pC |
Rds On - Drain-Source Resistance: | 128 mOhms |
Rise Time: | 1 ns |
Series: | CSD17484F4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | FemtoFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 11 ns |
Typical Turn-On Delay Time: | 3 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 650 mV |
Вес, г | 157 |
Техническая документация
Datasheet
pdf, 1677 КБ
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