CSD19532KTTT, MOSFET 100V, N-channel NexFET Pwr MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 100В, 200А, 250Вт, D2PAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFETs |
| Qg - Gate Charge: | 44 nC |
| Rds On - Drain-Source Resistance: | 5.6 mOhms |
| Rise Time: | 3 ns |
| Series: | CSD19532KTT |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | N-Channel MOSFET |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 V |
| Maximum Drain Source Voltage | 100 V |
| Mounting Type | Surface Mount |
| Package Type | DDPAK/TO-263 |
| Вес, г | 1.95 |
