IRFU024PBF, Транзистор
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Описание
МОП-транзистор 60V N-CH HEXFET МОП-транзистор I-PAK
Технические параметры
| Id - непрерывный ток утечки | 14 A |
| Pd - рассеивание мощности | 2.5 W |
| Qg - заряд затвора | 25 nC |
| Rds Вкл - сопротивление сток-исток | 100 mOhms |
| Vds - напряжение пробоя сток-исток | 60 V |
| Vgs - напряжение затвор-исток | 20 V, + 20 V |
| Vgs th - пороговое напряжение затвор-исток | 2 V |
| Вид монтажа | Through Hole |
| Высота | 6.22 mm |
| Длина | 6.73 mm |
| Канальный режим | Enhancement |
| Категория продукта | МОП-транзистор |
| Количество каналов | 1 Channel |
| Конфигурация | Single |
| Максимальная рабочая температура | + 150 C |
| Минимальная рабочая температура | 55 C |
| Подкатегория | MOSFETs |
| Полярность транзистора | N-Channel |
| Размер фабричной упаковки | 75 |
| Серия | IRFR/U |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay Semiconductors |
| Упаковка | Tube |
| Упаковка / блок | TO-251-3 |
| Ширина | 2.39 mm |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 14 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Maximum Drain Source Resistance (mOhm) | 100@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 56 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-251 |
| Supplier Package | IPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 42 |
| Typical Gate Charge @ 10V (nC) | 25(Max) |
| Typical Gate Charge @ Vgs (nC) | 25(Max)@10V |
| Typical Gate Plateau Voltage (V) | 6.1 |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Typical Gate to Source Charge (nC) | 5.8(Max) |
| Typical Input Capacitance @ Vds (pF) | 640@25V |
| Typical Output Capacitance (pF) | 360 |
| Typical Reverse Recovery Charge (nC) | 290 |
| Typical Reverse Recovery Time (ns) | 88 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 79@25V |
| Typical Rise Time (ns) | 58 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage | 60 V |
| Mounting Type | Through Hole |
| Package Type | IPAK(TO-251) |
| Вес, г | 0.33 |
