PN2222ABU
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см. техническую документацию
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Описание
Электроэлемент
Описание Транзистор NPN, биполярный, 40В, 1А, 625мВт, TO92 Характеристики Категория | Транзистор |
Тип | биполярный |
Вид | NPN |
Технические параметры
Brand | ON Semiconductor/Fairchild |
Collector- Base Voltage VCBO | 75 V |
Collector- Emitter Voltage VCEO Max | 40 V |
Collector-Emitter Saturation Voltage | 1 V |
Configuration | Single |
Continuous Collector Current | 1 A |
DC Current Gain hFE Max | 300 |
Emitter- Base Voltage VEBO | 6 V |
Factory Pack Quantity | 1000 |
Gain Bandwidth Product fT | 300 MHz |
Height | 4.7 mm |
Length | 4.7 mm |
Manufacturer | ON Semiconductor |
Maximum DC Collector Current | 1 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Package / Case | TO-92-3 |
Packaging | Bulk |
Pd - Power Dissipation | 625 mW |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | PN2222A |
Transistor Polarity | NPN |
Unit Weight | 0.006314 oz |
Width | 3.93 mm |
Brand: | onsemi/Fairchild |
Collector- Base Voltage VCBO: | 75 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 1 V |
Configuration: | Single |
Continuous Collector Current: | 1 A |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 10000 |
Gain Bandwidth Product fT: | 300 MHz |
Manufacturer: | onsemi |
Maximum DC Collector Current: | 1 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-92-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 625 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | PN2222A |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Maximum Collector Base Voltage | 75 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Frequency | 300 MHz |
Maximum Power Dissipation | 625 mW |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-92 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Вес, г | 0.5 |
Техническая документация
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