BD243CG
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 830 ֏
от 2 шт. —
1 410 ֏
от 5 шт. —
1 080 ֏
от 10 шт. —
970 ֏
Добавить в корзину 1 шт.
на сумму 1 830 ֏
Описание
Электроэлемент
Описание Транзистор NPN, биполярный, 100В, 6А, 65Вт, TO220AB Характеристики Категория | Транзистор |
Тип | биполярный |
Вид | PNP |
Технические параметры
Brand | ON Semiconductor |
Collector- Base Voltage VCBO | 100 V |
Collector- Emitter Voltage VCEO Max | 100 V |
Collector-Emitter Saturation Voltage | 1.5 V |
Configuration | Single |
Continuous Collector Current | 6 A |
DC Collector/Base Gain hfe Min | 30 |
Emitter- Base Voltage VEBO | 5 V |
Factory Pack Quantity | 50 |
Gain Bandwidth Product fT | 3 MHz |
Height | 9.28 mm(Max) |
Length | 10.28 mm(Max) |
Manufacturer | ON Semiconductor |
Maximum DC Collector Current | 6 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -65 C |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 65 W |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | BD243C |
Transistor Polarity | NPN |
Unit Weight | 0.211644 oz |
Width | 4.82 mm(Max) |
Maximum Collector Base Voltage | 100 V dc |
Maximum Collector Emitter Voltage | 100 V |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 1 MHz |
Maximum Power Dissipation | 65 W |
Minimum DC Current Gain | 20 |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Case | TO220AB |
Collector current | 6A |
Collector-emitter voltage | 100V |
Frequency | 3MHz |
Kind of package | tube |
Mounting | THT |
Polarisation | bipolar |
Power dissipation | 65W |
Type of transistor | NPN |
Вес, г | 2.012 |