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STFW3N150

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см. техническую документацию

4 шт. с центрального склада, срок 3 недели

6 500 ֏

от 2 шт. — 6 200 ֏

Добавить в корзину 1 шт. на сумму 6 500 ֏

Альтернативные предложения1

Номенклатурный номер: 8009182486

Бренд: STMicroelectronics

Описание

Электроэлемент

MOSFET, N CH, 1500V, 2.5A, TO3PF; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

Технические параметры

Brand	STMicroelectronics
Factory Pack Quantity	300
Id - Continuous Drain Current	2.5 A
Manufacturer	STMicroelectronics
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-3PF-3
Packaging	Tube
Pd - Power Dissipation	63 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	9 Ohms
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vds - Drain-Source Breakdown Voltage	1500 V
Channel Mode	Enhancement
Configuration	Single
Fall Time	61 ns
Forward Transconductance - Min	2.6 S
Maximum Operating Temperature	+150 C
Product Type	MOSFET
Qg - Gate Charge	29.3 nC
Rise Time	47 ns
Subcategory	MOSFETs
Tradename	PowerMESH
Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	24 ns
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	3 V
Channel Type	N
Maximum Continuous Drain Current	2.5 A
Maximum Drain Source Resistance	9 Ω
Maximum Drain Source Voltage	1500 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	63 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-3PF
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	29.3 nC @ 10 V
Width	5.7mm
Case	TO3PF
Drain current	1.6A
Drain-source voltage	1.5kV
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Mounting	THT
On-state resistance	9Ω
Polarisation	unipolar
Power dissipation	63W
Type of transistor	N-MOSFET
Вес, г	520