TN0110N3-G, Trans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 Bag

TN0110N3-G, Trans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 Bag
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Номенклатурный номер: 8013944195

Описание

Discrete Semiconductors\Fet Transistors\Mosfet

Технические параметры

Brand: Microchip Technology
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 1000
Fall Time: 3 ns
Forward Transconductance - Min: 225 mS
Id - Continuous Drain Current: 350 mA
Manufacturer: Microchip
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package/Case: TO-92-3
Packaging: Bulk
Pd - Power Dissipation: 1 W
Product Category: MOSFET
Product Type: MOSFET
Rds On - Drain-Source Resistance: 3 Ohms
Rise Time: 3 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 6 ns
Typical Turn-On Delay Time: 2 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV

Техническая документация

Datasheet
pdf, 608 КБ