NJW0281G, Транзистор
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Описание
Описание Транзистор биполярный стандартный, TO-3P
Технические параметры
| Maximum Collector Base Voltage | 250 V dc |
| Maximum Collector Emitter Voltage | 250 V |
| Maximum DC Collector Current | 15 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 1 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 150 W |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-3P |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Brand: | onsemi |
| Collector- Base Voltage VCBO: | 250 V |
| Collector- Emitter Voltage VCEO Max: | 250 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| Configuration: | Single |
| Continuous Collector Current: | 15 A |
| DC Collector/Base Gain hFE Min: | 75 |
| DC Current Gain hFE Max: | 75 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: | 30 |
| Gain Bandwidth Product fT: | 30 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 15 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-3P-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 150 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 1 |
