CSD17575Q3T, Транзистор N-MOSFET, полевой, 30В, 60А, 108Вт, NexFET™
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см. техническую документацию
см. техническую документацию
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Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 118 S |
Id - Continuous Drain Current: | 60 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 108 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 23 nC |
Rds On - Drain-Source Resistance: | 2.6 mOhms |
Rise Time: | 10 ns |
Series: | CSD17575Q3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 4 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 474 КБ
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