CSD17573Q5B, Транзистор N-канал 30В 100A Q5B
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Описание
транзисторы полевые импортные
Описание Транзистор MOSFET TDFN8
Технические параметры
| Структура | N-канал | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 7 ns | |
| Forward Transconductance - Min: | 181 S | |
| Id - Continuous Drain Current: | 100 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | VSON-CLIP-8 | |
| Pd - Power Dissipation: | 195 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 49 nC | |
| Rds On - Drain-Source Resistance: | 1 mOhms | |
| Rise Time: | 20 ns | |
| Series: | CSD17573Q5B | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 40 ns | |
| Typical Turn-On Delay Time: | 6 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V | |
| Brand | Texas Instruments | |
| Channel Mode | Enhancement | |
| Configuration | 1 N-Channel | |
| Factory Pack Quantity | 250 | |
| Fall Time | 7 ns | |
| Forward Transconductance - Min | 181 S | |
| Id - Continuous Drain Current | 332 A | |
| Manufacturer | Texas Instruments | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | VSON-8 | |
| Packaging | Reel | |
| Pd - Power Dissipation | 195 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 64 nC | |
| Rds On - Drain-Source Resistance | 840 uOhms | |
| Rise Time | 20 ns | |
| RoHS | Details | |
| Series | CSD17573Q5B | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 40 ns | |
| Typical Turn-On Delay Time | 6 ns | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Vgs - Gate-Source Voltage | +/-20 V | |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V | |
| Вес, г | 1 |
Техническая документация
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