MJB45H11T4G, D2Pak (TO-263)
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640 ֏
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Описание
транзисторы биполярные импортные
Биполярный транзистор, PNP, 80 В, 10 А
Технические параметры
| Корпус | TO-263 | |
| Maximum Collector Emitter Voltage | -80 V | |
| Maximum Emitter Base Voltage | 5 V dc | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 50 W | |
| Minimum DC Current Gain | 60 | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | D2PAK(TO-263) | |
| Pin Count | 2+Tab | |
| Transistor Configuration | Single | |
| Transistor Type | PNP | |
| Brand: | onsemi | |
| Collector- Emitter Voltage VCEO Max: | 80 V | |
| Collector-Emitter Saturation Voltage: | 1 V | |
| Configuration: | Single | |
| Continuous Collector Current: | 10 A | |
| DC Collector/Base Gain hfe Min: | 60 | |
| Emitter- Base Voltage VEBO: | 5 V | |
| Factory Pack Quantity: Factory Pack Quantity: | 800 | |
| Gain Bandwidth Product fT: | 40 MHz | |
| Manufacturer: | onsemi | |
| Maximum DC Collector Current: | 10 A | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Package / Case: | D2PAK-3(TO-263-3) | |
| Pd - Power Dissipation: | 2 W | |
| Product Category: | Bipolar Transistors-BJT | |
| Product Type: | BJTs-Bipolar Transistors | |
| REACH - SVHC: | Details | |
| Series: | MJB45H11 | |
| Subcategory: | Transistors | |
| Technology: | Si | |
| Transistor Polarity: | PNP | |
| Вес, г | 2 |
