CSD25404Q3T, Транзистор: P-MOSFET, полевой, -20В, -60А, 96Вт, VSON-CLIP8

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Номенклатурный номер: 8018954303

Описание Транзистор: P-MOSFET, полевой, -20В, -60А, 96Вт, VSON-CLIP8 Характеристики

Channel Mode	Enhancement
Channel Type	P
Forward Diode Voltage	1V
Maximum Continuous Drain Current	104 A
Maximum Drain Source Resistance	150 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Gate Threshold Voltage	1.15V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	96 W
Minimum Gate Threshold Voltage	0.65V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	VSON-CLIP
Pin Count	8
Series	NexFET
Transistor Configuration	Single
Typical Gate Charge @ Vgs	10.8 nC @ 4.5 V
Width	3.4mm
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	750
Fall Time:	13 ns
Forward Transconductance - Min:	47 S
Id - Continuous Drain Current:	104 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSON-CLIP-8
Pd - Power Dissipation:	96 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	Power MOSFETs
Qg - Gate Charge:	10.8 nC
Rds On - Drain-Source Resistance:	6.5 mOhms
Rise Time:	8 ns
Series:	CSD25404Q3
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	P-Channel MOSFET
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	650 mV
Вес, г	1