CSD19534Q5AT, Транзистор полевой N-канальный 100В 137A 8SON
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 100В 137A 8SON
Технические параметры
| Корпус | 8-VSON-FET(5x6) | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 250 | |
| Fall Time: | 6 ns | |
| Forward Transconductance - Min: | 47 S | |
| Id - Continuous Drain Current: | 50 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | VSONP-8 | |
| Pd - Power Dissipation: | 63 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 17 nC | |
| Rds On - Drain-Source Resistance: | 15.1 mOhms | |
| Rise Time: | 14 ns | |
| Series: | CSD19534Q5A | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 20 ns | |
| Typical Turn-On Delay Time: | 9 ns | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3.4 V | |
| Continuous Drain Current (Id) | 44A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 15.1mΩ@10A, 10V | |
| Drain Source Voltage (Vdss) | 100V | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.68nF@50V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Power Dissipation (Pd) | 3.2W;63W | |
| Total Gate Charge (Qg@Vgs) | 22nC@10V | |
| Type | null | |
| Вес, г | 1 |
