CSD19534Q5A, Транзистор полевой N-канальный 100В 137A 8SON
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 100В 137A 8SON
Технические параметры
| Корпус | 8-VSON-FET(5x6) | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 6 ns | |
| Forward Transconductance - Min: | 47 S | |
| Id - Continuous Drain Current: | 50 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | VSONP-8 | |
| Pd - Power Dissipation: | 63 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 17 nC | |
| Rds On - Drain-Source Resistance: | 15.1 mOhms | |
| Rise Time: | 14 ns | |
| Series: | CSD19534Q5A | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 20 ns | |
| Typical Turn-On Delay Time: | 9 ns | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Resistance | 1.51e+007 O | |
| Maximum Drain Source Voltage | 100 V | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | VSONP | |
| Pin Count | 8 | |
| Series | NexFET | |
| Transistor Material | Si | |
| Automotive | No | |
| Configuration | Single Quad Drain Triple Source | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | No Lead | |
| Material | Si | |
| Maximum Continuous Drain Current (A) | 50 | |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 10 | |
| Maximum Diode Forward Voltage (V) | 1 | |
| Maximum Drain Source Resistance (mOhm) | 15.1@10V | |
| Maximum Drain Source Voltage (V) | 100 | |
| Maximum Gate Resistance (Ohm) | 2.2 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Gate Threshold Voltage (V) | 3.4 | |
| Maximum IDSS (uA) | 1 | |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Maximum Power Dissipation (mW) | 3200 | |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.2 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 137 | |
| Minimum Gate Threshold Voltage (V) | 2.4 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 8 | |
| PPAP | No | |
| Process Technology | NexFET | |
| Product Category | Power MOSFET | |
| Standard Package Name | SON | |
| Supplier Package | VSONP EP | |
| Typical Diode Forward Voltage (V) | 0.8 | |
| Typical Fall Time (ns) | 6 | |
| Typical Gate Charge @ 10V (nC) | 17 | |
| Typical Gate Charge @ Vgs (nC) | 17@10V | |
| Typical Gate Plateau Voltage (V) | 4.1 | |
| Typical Gate Threshold Voltage (V) | 2.8 | |
| Typical Gate to Drain Charge (nC) | 3.2 | |
| Typical Gate to Source Charge (nC) | 5.1 | |
| Typical Input Capacitance @ Vds (pF) | 1290@50V | |
| Typical Output Capacitance (pF) | 257 | |
| Typical Reverse Recovery Charge (nC) | 134 | |
| Typical Reverse Recovery Time (ns) | 53 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 5.7@50V | |
| Typical Rise Time (ns) | 14 | |
| Typical Turn-Off Delay Time (ns) | 20 | |
| Typical Turn-On Delay Time (ns) | 9 | |
| Transistor Polarity | N Channel; Continuous Drain Current Id | |
| Вес, г | 0.325 |
Техническая документация
Datasheet CSD19534Q5A
pdf, 398 КБ
