Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Texas Instruments › CSD18513Q5A

CSD18513Q5A

Изображения служат только для ознакомления,
см. техническую документацию

780 ֏

Мин. кол-во для заказа 2 шт.

от 10 шт. — 610 ֏

от 30 шт. — 530 ֏

от 100 шт. — 453 ֏

Добавить в корзину 2 шт. на сумму 1 560 ֏

Номенклатурный номер: 8022702731

Бренд: Texas Instruments

Описание

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	1 N-Channel
Factory Pack Quantity	2500
Fall Time	4 ns
Forward Transconductance - Min	89 S
Height	1 mm
Id - Continuous Drain Current	124 A
Length	6 mm
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	VSONP-8
Packaging	Reel
Pd - Power Dissipation	96 W
Product Category	MOSFET
Qg - Gate Charge	59 nC
Rds On - Drain-Source Resistance	2.8 mOhms
Rise Time	12 ns
RoHS	Details
Series	CSD18513Q5A
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	21 ns
Typical Turn-On Delay Time	6 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V
Width	4.9 mm
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	4 ns
Forward Transconductance - Min:	89 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	96 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	59 nC
Rds On - Drain-Source Resistance:	4.1 mOhms
Rise Time:	12 ns
Series:	CSD18513Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	6 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	1