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CSD17577Q5AT

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Номенклатурный номер: 8024064152

Бренд: Texas Instruments

Описание

N-канал 30V 60A (Ta) 3W (Ta), 53W (Tc) Поверхностный монтаж 8-VSONP (5x6)

Технические параметры

Base Product Number	CSD17577 ->
Current - Continuous Drain (Id) @ 25В°C	60A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	2310pF @ 15V
Manufacturer Product Page	http://www.ti.com/general/docs/suppproductinfo.tsp
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs	4.2mOhm @ 18A, 10V
REACH Status	REACH Affected
RoHS Status	ROHS3 Compliant
Series	NexFETв„ў ->
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	1.8V @ 250ВµA
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	250
Fall Time:	2 ns
Id - Continuous Drain Current:	60 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+85 C
Minimum Operating Temperature:	-40 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	53 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	4.8 mOhms
Rise Time:	12 ns
Series:	CSD17577Q5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	3 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Continuous Drain Current (Id)	60A
Drain Source On Resistance (RDS(on)@Vgs,Id)	4.2mΩ@18A, 10V
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	1.8V@250uA
Input Capacitance (Ciss@Vds)	2.31nF@15V
Power Dissipation (Pd)	3W;53W
Total Gate Charge (Qg@Vgs)	35nC@10V
Type	null
Вес, г	0.48