CSD17581Q3AT, Транзистор N-MOSFET, полевой, 30В, 60А, 63Вт, VSONP8 3,3x3,3мм
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Описание
Описание Транзистор N-MOSFET, полевой, 30В, 60А, 63Вт, VSONP8 3,3x3,3мм Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 78 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 63 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 54 nC |
| Rds On - Drain-Source Resistance: | 3.9 mOhms |
| Rise Time: | 23 ns |
| Series: | CSD17581Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.028 |
