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FZT853TA, Транзистор: NPN

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1 140 ֏

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Номенклатурный номер: 8026856499

Бренд: DIODES INC.

Описание

Описание Транзистор: NPN

Технические параметры

Base Product Number	FZT853 ->
Current - Collector (Ic) (Max)	6A
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 2A, 2V
ECCN	EAR99
Frequency - Transition	130MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)
Package / Case	TO-261-4, TO-261AA
Power - Max	3W
REACH Status	REACH Affected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-223
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	340mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)	100V
Collector-Emitter Breakdown Voltage	100V
Maximum DC Collector Current	6A
Pd - Power Dissipation	3W
Maximum Collector Base Voltage	200 V
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	130 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3 W
Minimum DC Current Gain	100
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3+Tab
Transistor Configuration	Single
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	200 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	340 mV
Configuration:	Single
Continuous Collector Current:	6 A
DC Collector/Base Gain hfe Min:	20 at 10 A, 2 V
DC Current Gain hFE Max:	100
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	130 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	6 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-4
Pd - Power Dissipation:	3 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
REACH - SVHC:	Details
Series:	FZT853
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.15