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P-Channel MOSFET, 350 V SOT-23 TP5335K1-G

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Номенклатурный номер: 8031014267

Бренд: Microchip Technology

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process.

Технические параметры

Channel Type	P
Maximum Drain Source Voltage	350 V
Mounting Type	Through Hole
Package Type	SOT-23
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	15 ns
Id - Continuous Drain Current:	85 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Pd - Power Dissipation:	360 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	30 Ohms
Rise Time:	15 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	FET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	350 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V