DN3545N8-G, Transistor MOSFET - N Channel - 450V - 200mA - 20 ohm

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Номенклатурный номер: 8031501537

Discrete Semiconductors\Fet Transistors\Mosfet

Trans MOSFET N-CH Si 450V 0.2A 4-Pin(3+Tab) SOT-89 T/R

Automotive	No
Channel Mode	Depletion
Channel Type	N
Configuration	Single Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Flat
Material	Si
Maximum Continuous Drain Current (A)	0.2
Maximum Diode Forward Voltage (V)	1.8
Maximum Drain Source Resistance (mOhm)	20000@0V
Maximum Drain Source Voltage (V)	450
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum IDSS (uA)	200000(Min)
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	78
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	1600
Maximum Power Dissipation on PCB @ TC=25°C (W)	1.6
Maximum Pulsed Drain Current @ TC=25°C (A)	0.3
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	4
PPAP	No
Process Technology	VDMOS
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-89
Tab	Tab
Typical Fall Time (ns)	40(Max)
Typical Gate Plateau Voltage (V)	1.1
Typical Input Capacitance @ Vds (pF)	360(Max)@25V
Typical Output Capacitance (pF)	40(Max)
Typical Reverse Recovery Time (ns)	800
Typical Reverse Transfer Capacitance @ Vds (pF)	15(Max)@25V
Typical Rise Time (ns)	30(Max)
Typical Turn-Off Delay Time (ns)	30(Max)
Typical Turn-On Delay Time (ns)	20(Max)