SI2319CDS-T1-GE3, Транзистор полевой P-канальный 40В 4.4А 2.5Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой P-канальный 40В 4.4А 2.5Вт
Технические параметры
Корпус | sot-23 | |
Current - Continuous Drain (Id) @ 25В°C | 4.4A(Tc) | |
Drain to Source Voltage (Vdss) | 40V | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
FET Feature | - | |
FET Type | P-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 20V | |
Manufacturer | Vishay Siliconix | |
Mounting Type | Surface Mount | |
Operating Temperature | -55В°C ~ 150В°C(TJ) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Packaging | Tape & Reel(TR) | |
Part Status | Active | |
Power Dissipation (Max) | 1.25W(Ta), 2.5W(Tc) | |
Rds On (Max) @ Id, Vgs | 77mOhm @ 3.1A, 10V | |
Series | TrenchFETВ® | |
Supplier Device Package | SOT-23-3(TO-236) | |
Technology | MOSFET(Metal Oxide) | |
Vgs (Max) | В±20V | |
Vgs(th) (Max) @ Id | 2.5V @ 250ВµA | |
Automotive | No | |
Channel Mode | Enhancement | |
Channel Type | P | |
Configuration | Single | |
ECCN (US) | EAR99 | |
EU RoHS | Compliant | |
Lead Shape | Gull-wing | |
Maximum Continuous Drain Current (A) | 3.1 | |
Maximum Drain Source Resistance (mOhm) | 77@10V | |
Maximum Drain Source Voltage (V) | 40 | |
Maximum Gate Source Voltage (V) | ±20 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Power Dissipation (mW) | 1250 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Surface Mount | |
Number of Elements per Chip | 1 | |
Operating Junction Temperature (°C) | -55 to 150 | |
PCB changed | 3 | |
Pin Count | 3 | |
PPAP | No | |
Process Technology | TrenchFET | |
Product Category | Power MOSFET | |
Standard Package Name | SOT | |
Supplier Package | SOT-23 | |
Typical Fall Time (ns) | 8|10 | |
Typical Gate Charge @ 10V (nC) | 13.6 | |
Typical Gate Charge @ Vgs (nC) | 13.6@10V|7@4.5V | |
Typical Input Capacitance @ Vds (pF) | 595@20V | |
Typical Rise Time (ns) | 27|9 | |
Typical Turn-Off Delay Time (ns) | 18|20 | |
Typical Turn-On Delay Time (ns) | 40|8 | |
Maximum Continuous Drain Current | 4.4 A | |
Maximum Drain Source Resistance | 108 mΩ | |
Maximum Drain Source Voltage | 40 V | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 2.5 W | |
Minimum Gate Threshold Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Package Type | SOT-23 | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 13.6 nC @ 10 V | |
Width | 1.4mm | |
Вес, г | 0.05 |
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