IRF540SPBF, MOSFET 100V N-CH HEXFET D2-PAK

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see technical documentation
see technical documentation

5 100 ֏
from 10 pcs. —
4 260 ֏
from 100 pcs. —
2 930 ֏
from 500 pcs. —
2 270 ֏
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Description
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:230mJ; Capacitance Ciss Typ:1700pF; Current Id Max:28A; Operating Temperature Min:-55°C; Pulse Current Idm:110A; Reverse Recovery Time trr Typ:180ns; SMD Marking:F540S; Termination Type:Surface Mount Device; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Technical parameters
Weight, g | 4 |
Technical documentation
Datasheet
pdf, 212 КБ