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Insulated gate bipolar transistors 1200 V

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IGW40T120FKSA1 (G40T120), IGBT Chip N-CH 1200V 40A 270W [PG-TO-247-3] (BUP314 replacement) Brand: Infineon Technology / Family: TRENCHSTOP and Fieldstop Built-in diode: no Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 75 Pulse collector current (Icm), A: 105 Saturation voltage at rated current, V: 2.3 Maximum power dissipation, W: 270 Turn-on delay time (td (on)) at at 25 ° C, ns: 48 Turn-off delay time (td (off)) at at 25 ° C, ns: 480 Operating temperature (Tj), ° C: -40…+150 Housing: PG-TO247-3	quick view		5 400 ֏ 3 930 ֏ × from 15 pcs. — 3 910 ֏
SGW25N120FKSA1, IGBT transistor, NPT, 1200V, 25A [PG-TO-247-3] Brand: Infineon Technology / Family: NPT Built-in diode: no Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 46 Pulse collector current (Icm), A: 84 Saturation voltage at rated current, V: 3.6 Maximum power dissipation, W: 313 Turn-on delay time (td (on)) at at 25 ° C, ns: 45 Turn-off delay time (td (off)) at at 25 ° C, ns: 730 Operating temperature (Tj), ° C: -55…+150 Housing: PG-TO247-3	quick view		8 100 ֏ 5 700 ֏ × from 15 pcs. — 5 600 ֏
FGA25N120ANTDTU, IGBT transistor 1200V 25A 312W, built-in diode [TO-3PN] Brand: ON Semiconductor Technology / Family: npt trench Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 90 Saturation voltage at rated current, V: 2.65 Maximum power dissipation, W: 312 Turn-on delay time (td (on)) at at 25 ° C, ns: 50 Turn-off delay time (td (off)) at at 25 ° C, ns: 190 Operating temperature (Tj), ° C: -55…+150 Housing: to-3p	quick view		2 910 ֏ 1 940 ֏ × from 50 pcs. — 1 790 ֏
FGL40N120ANDTU, IGBT transistor 1200V 64A 500W + diode [TO-264] Brand: ON Semiconductor Technology / Family: NPT Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 64 Pulse collector current (Icm), A: 160 Saturation voltage at rated current, V: 3.2 Maximum power dissipation, W: 500 Turn-on delay time (td (on)) at at 25 ° C, ns: 15 Turn-off delay time (td (off)) at at 25 ° C, ns: 110 Operating temperature (Tj), ° C: -55…+150 Housing: TO-264	quick view		8 300 ֏ 7 700 ֏ × from 15 pcs. — 7 300 ֏
HGTG10N120BND, 1200V 17A IGBT transistor [TO-247] Brand: ON Semiconductor Technology / Family: NPT Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 35 Pulse collector current (Icm), A: 80 Saturation voltage at rated current, V: 2.7 Maximum power dissipation, W: 298 Turn-on delay time (td (on)) at at 25 ° C, ns: 23 Turn-off delay time (td (off)) at at 25 ° C, ns: 165 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view		3 520 ֏ 2 390 ֏ × from 15 pcs. — 2 350 ֏
HGTG11N120CND, 1200V 43A 298W IGBT IGBT [TO-247] Brand: ON Semiconductor Technology / Family: NPT Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 43 Pulse collector current (Icm), A: 80 Saturation voltage at rated current, V: 2.4 Maximum power dissipation, W: 298 Turn-on delay time (td (on)) at at 25 ° C, ns: 23 Turn-off delay time (td (off)) at at 25 ° C, ns: 180 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view		4 250 ֏ 2 890 ֏ × from 15 pcs. — 2 860 ֏
HGTG5N120BND, IGBT NPT 1200V 21A 167W [TO-247] Brand: ON Semiconductor Technology / Family: NPT Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 21 Pulse collector current (Icm), A: 40 Saturation voltage at rated current, V: 2.7 Maximum power dissipation, W: 167 Turn-on delay time (td (on)) at at 25 ° C, ns: 22 Turn-off delay time (td (off)) at at 25 ° C, ns: 160 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view		2 910 ֏ 1 880 ֏ × from 15 pcs. — 1 860 ֏
IGW60T120FKSA1 (G60T120), Transistor IGBT Chip N-CH 1200V 60A 375W [PG-TO-247-3] Brand: Infineon Technology / Family: TRENCHSTOP and Fieldstop Built-in diode: no Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 100 Pulse collector current (Icm), A: 150 Saturation voltage at rated current, V: 2.4 Maximum power dissipation, W: 375 Turn-on delay time (td (on)) at at 25 ° C, ns: 50 Turn-off delay time (td (off)) at at 25 ° C, ns: 480 Operating temperature (Tj), ° C: -40…+150 Housing: PG-TO247-3	quick view		6 500 ֏ 4 000 ֏ × from 3 pcs. — 3 730 ֏
IKW15N120H3FKSA1 (K15H1203), IGBT, N-channel, 1200 V, 30 A, 217 W, [TO-247] Brand: Infineon Technology / Family: Trench and Fieldstop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 60 Saturation voltage at rated current, V: 2.4 Maximum power dissipation, W: 217 Turn-on delay time (td (on)) at at 25 ° C, ns: 21 Turn-off delay time (td (off)) at at 25 ° C, ns: 260 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-3	quick view		4 790 ֏ 3 240 ֏ × from 15 pcs. — 3 210 ֏
IKW25N120H3FKSA1 (K25H1203), Transistor IGBT TrenchStop 1200V 25A [PG-TO247-3] Brand: Infineon Technology / Family: Trench and Fieldstop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 100 Saturation voltage at rated current, V: 2.4 Maximum power dissipation, W: 326 Turn-on delay time (td (on)) at at 25 ° C, ns: 27 Turn-off delay time (td (off)) at at 25 ° C, ns: 277 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-3	quick view		6 700 ֏ 4 630 ֏ × from 15 pcs. — 4 560 ֏
IKW25N120T2FKSA1 (K25T1202), Transistor IGBT TrenchStop 2 1200V 25A [PG-TO247-3] Brand: Infineon Technology / Family: TRENCHSTOP 2 Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 100 Saturation voltage at rated current, V: 2.2 Maximum power dissipation, W: 349 Turn-on delay time (td (on)) at at 25 ° C, ns: 27 Turn-off delay time (td (off)) at at 25 ° C, ns: 265 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-3	quick view		6 700 ֏ 4 590 ֏ × from 15 pcs. — 4 520 ֏
IKW40N120H3FKSA1 (K40H1203), IGBT transistor, TRENCHSTOP, 1200V, 40A [PG-TO-247-3] Brand: Infineon Technology / Family: Trench and Fieldstop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 160 Saturation voltage at rated current, V: 2.4 Maximum power dissipation, W: 483 Turn-on delay time (td (on)) at at 25 ° C, ns: 30 Turn-off delay time (td (off)) at at 25 ° C, ns: 290 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-3	quick view		12 800 ֏ 9 100 ֏ × from 15 pcs. — 9 000 ֏
IKW40N120T2FKSA1 (K40T1202), IGBT transistor, TRENCHSTOP 2, 1200V, 40A [PG-TO-247-3] Brand: Infineon Technology / Family: TRENCHSTOP 2 Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 75 Pulse collector current (Icm), A: 160 Saturation voltage at rated current, V: 2.2 Maximum power dissipation, W: 480 Turn-on delay time (td (on)) at at 25 ° C, ns: 33 Turn-off delay time (td (off)) at at 25 ° C, ns: 314 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-3	quick view		10 000 ֏ 4 870 ֏ × from 15 pcs. — 3 950 ֏
IKY75N120CH3XKSA1 (K75MCH3), Transistor, IGBT HighSpeed 3, N-CH, 1200V, 75A, 18...60 kHz [PG-TO247-4-2] Brand: Infineon Technology / Family: High speed H3 Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 150 Pulse collector current (Icm), A: 300 Saturation voltage at rated current, V: 2.35 Maximum power dissipation, W: 938 Turn-on delay time (td (on)) at at 25 ° C, ns: 38 Turn-off delay time (td (off)) at at 25 ° C, ns: 303 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-4-2	quick view		20 900 ֏ 15 100 ֏ × from 15 pcs. — 15 000 ֏
MSG15T120FPC, IGBT Transistor 1200V 15A 125W [TO-247] 5-7 days, 127 pcs. Brand: MASPOWER Technology / Family: Trench/Field-Stop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 40 Saturation voltage at rated current, V: 2.2 Maximum power dissipation, W: 125 Turn-on delay time (td (on)) at at 25 ° C, ns: 80 Turn-off delay time (td (off)) at at 25 ° C, ns: 180 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view	5-7 days, 127 pcs.	650 ֏ × from 10 pcs. — 600 ֏
MSG15T120HLC0, IGBT Transistor 1200V 15A 238W [TO-247] 5-7 days, 346 pcs. Brand: MASPOWER Technology / Family: Trench/Field-Stop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 1.6 Maximum power dissipation, W: 238 Turn-on delay time (td (on)) at at 25 ° C, ns: 10 Turn-off delay time (td (off)) at at 25 ° C, ns: 52 Operating temperature (Tj), ° C: -40…+175 Housing: to-247	quick view	5-7 days, 346 pcs.	610 ֏ × from 10 pcs. — 560 ֏
MSG25T120FQC, IGBT Transistor 1200V 25A 350W [TO-247] 5-7 days, 301 pcs. Brand: MASPOWER Technology / Family: Trench/Field-Stop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 60 Saturation voltage at rated current, V: 1.75 Maximum power dissipation, W: 350 Turn-on delay time (td (on)) at at 25 ° C, ns: 93 Turn-off delay time (td (off)) at at 25 ° C, ns: 216 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view	5-7 days, 301 pcs.	920 ֏ × from 10 pcs. — 840 ֏
MSG30D120FLB, IGBT Transistor 1200V 30A 342W [TO-3PB] 5-7 days, 204 pcs. Brand: MASPOWER Technology / Family: Trench/Field-Stop Built-in diode: no Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 60 Pulse collector current (Icm), A: 120 Saturation voltage at rated current, V: 1.5 Maximum power dissipation, W: 342 Turn-on delay time (td (on)) at at 25 ° C, ns: 32 Turn-off delay time (td (off)) at at 25 ° C, ns: 121 Operating temperature (Tj), ° C: -55…+150 Housing: to-3pb	quick view	5-7 days, 204 pcs.	1 650 ֏ × from 10 pcs. — 1 500 ֏
MSG40T120FQC, IGBT Transistor 1200V 40A 342W [TO-247] 5-7 days, 98 pcs. Brand: MASPOWER Technology / Family: Trench/Field-Stop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 100 Saturation voltage at rated current, V: 1.6 Maximum power dissipation, W: 342 Turn-on delay time (td (on)) at at 25 ° C, ns: 85 Turn-off delay time (td (off)) at at 25 ° C, ns: 260 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view	5-7 days, 98 pcs.	1 300 ֏ × from 10 pcs. — 1 190 ֏
MSG50T120FQW, IGBT Transistor 1200V 50A 320W [TO-264] 5-7 days, 120 pcs. Brand: MASPOWER Technology / Family: Trench/Field-Stop Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 100 Pulse collector current (Icm), A: 200 Saturation voltage at rated current, V: 2.2 Maximum power dissipation, W: 535 Turn-on delay time (td (on)) at at 25 ° C, ns: 118 Turn-off delay time (td (off)) at at 25 ° C, ns: 282 Operating temperature (Tj), ° C: -55…+175 Housing: TO-264	quick view	5-7 days, 120 pcs.	1 910 ֏ × from 10 pcs. — 1 750 ֏

Insulated gate bipolar transistors 1200 V

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