Insulated Gate Bipolar Transistors Infineon Technologies

over 1000
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Brand / Manufacturer
Technology / Family
Built-in diode
Maximum CE voltage, V
Maximum CE current at 25 ° C, A
Pulse collector current (Icm), A
Saturation voltage at rated current, V
Maximum power dissipation, W
Turn-on delay time (td (on)) at at 25 ° C, ns
Turn-off delay time (td (off)) at at 25 ° C, ns
Operating temperature (Tj), ° C
Housing
In stock
Yerevan
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Min. Price ֏
Max. Price ֏
 
IGW40T120FKSA1 (G40T120), IGBT Chip N-CH 1200V 40A 270W [PG-TO-247-3] (BUP314 replacement)
Brand: Infineon
Technology / Family: TRENCHSTOP and Fieldstop
Built-in diode: no
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 75
Pulse collector current (Icm), A: 105
Saturation voltage at rated current, V: 2.3
Maximum power dissipation, W: 270
Turn-on delay time (td (on)) at at 25 ° C, ns: 48
Turn-off delay time (td (off)) at at 25 ° C, ns: 480
Operating temperature (Tj), ° C: -40…+150
Housing: PG-TO247-3
quick view
5 400 ֏
4 090 ֏
×
from 15 pcs. — 4 080 ֏
SGW25N120FKSA1, IGBT transistor, NPT, 1200V, 25A [PG-TO-247-3]
Brand: Infineon
Technology / Family: NPT
Built-in diode: no
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 46
Pulse collector current (Icm), A: 84
Saturation voltage at rated current, V: 3.6
Maximum power dissipation, W: 313
Turn-on delay time (td (on)) at at 25 ° C, ns: 45
Turn-off delay time (td (off)) at at 25 ° C, ns: 730
Operating temperature (Tj), ° C: -55…+150
Housing: PG-TO247-3
quick view
8 100 ֏
5 900 ֏
×
IKW50N60H3FKSA1 (K50H603), Transistor, IGBT, Trench and Fieldstop, N-channel, 600V, 50A, [TO-247]
Brand: Infineon
Technology / Family: TRENCHSTOP and Fieldstop
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 100
Pulse collector current (Icm), A: 200
Saturation voltage at rated current, V: 2.3
Maximum power dissipation, W: 333
Turn-on delay time (td (on)) at at 25 ° C, ns: 23
Turn-off delay time (td (off)) at at 25 ° C, ns: 235
Operating temperature (Tj), ° C: -40…+175
Housing: PG-TO247-3
quick view
6 900 ֏
4 950 ֏
×
from 15 pcs. — 4 850 ֏
IRG4PC30UDPBF, 600V 23A IGBT transistor, [TO-247AC]
Brand: Infineon
Technology / Family: Gen 4
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 23
Pulse collector current (Icm), A: 92
Saturation voltage at rated current, V: 2.1
Maximum power dissipation, W: 100
Turn-on delay time (td (on)) at at 25 ° C, ns: 40
Turn-off delay time (td (off)) at at 25 ° C, ns: 91
Operating temperature (Tj), ° C: -55…+150
Housing: to-247ac
quick view
5 900 ֏ ×
from 15 pcs. — 5 700 ֏
IRGB4056DPBF, 600V 24A IGBT transistor [TO-220AB]
Brand: Infineon
Technology / Family: Trench
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 24
Pulse collector current (Icm), A: 48
Saturation voltage at rated current, V: 1.85
Maximum power dissipation, W: 140
Turn-on delay time (td (on)) at at 25 ° C, ns: 31
Turn-off delay time (td (off)) at at 25 ° C, ns: 83
Operating temperature (Tj), ° C: -55…+175
Housing: TO-220AB
quick view
2 610 ֏
1 780 ֏
×
from 15 pcs. — 1 770 ֏
IRGB4062DPBF, 600V 48A IGBT transistor [TO-220AB]
Brand: Infineon
Technology / Family: Trench
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 48
Pulse collector current (Icm), A: 72
Saturation voltage at rated current, V: 1.95
Maximum power dissipation, W: 250
Turn-on delay time (td (on)) at at 25 ° C, ns: 41
Turn-off delay time (td (off)) at at 25 ° C, ns: 104
Operating temperature (Tj), ° C: -55…+175
Housing: TO-220AB
quick view
4 070 ֏
2 870 ֏
×
from 15 pcs. — 2 850 ֏
IRGP4062DPBF, 600V 48A 8-30kHz IGBT IGBT [TO-247AC]
Brand: Infineon
Technology / Family: Trench
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 48
Pulse collector current (Icm), A: 72
Saturation voltage at rated current, V: 1.95
Maximum power dissipation, W: 250
Turn-on delay time (td (on)) at at 25 ° C, ns: 41
Turn-off delay time (td (off)) at at 25 ° C, ns: 104
Operating temperature (Tj), ° C: -55…+175
Housing: to-247ac
quick view
5 800 ֏
4 110 ֏
×
from 15 pcs. — 4 070 ֏
IRGP4063DPBF, 600V 96A IGBT Transistor [TO-247AC]
Brand: Infineon
Technology / Family: Trench
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 96
Pulse collector current (Icm), A: 144
Saturation voltage at rated current, V: 2.14
Maximum power dissipation, W: 330
Turn-on delay time (td (on)) at at 25 ° C, ns: 60
Turn-off delay time (td (off)) at at 25 ° C, ns: 145
Operating temperature (Tj), ° C: -40…+175
Housing: to-247ac
quick view
8 800 ֏
6 500 ֏
×
from 15 pcs. — 6 400 ֏
IRGP4063PBF, IGBT transistor 600V 96A 8-30kHz [TO-247AC]
Brand: Infineon
Technology / Family: Trench
Built-in diode: no
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 96
Pulse collector current (Icm), A: 144
Saturation voltage at rated current, V: 2.14
Maximum power dissipation, W: 330
Turn-on delay time (td (on)) at at 25 ° C, ns: 60
Turn-off delay time (td (off)) at at 25 ° C, ns: 145
Operating temperature (Tj), ° C: -55…+175
Housing: to-247ac
quick view
6 500 ֏
4 780 ֏
×
from 15 pcs. — 4 700 ֏
IRGP4066D-EPBF, Transistor IGBT 600V 140A 454W [TO-247AD]
Brand: Infineon
Technology / Family: Trench
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 140
Pulse collector current (Icm), A: 225
Saturation voltage at rated current, V: 2.1
Maximum power dissipation, W: 454
Turn-on delay time (td (on)) at at 25 ° C, ns: 50
Turn-off delay time (td (off)) at at 25 ° C, ns: 200
Operating temperature (Tj), ° C: -55…+175
Housing: TO-247AD
quick view
11 200 ֏
8 400 ֏
×
from 15 pcs. — 8 300 ֏
IRGP4068DPBF, 600V 48A IGBT Transistor [TO-247AC]
Brand: Infineon
Technology / Family: Trench
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 96
Pulse collector current (Icm), A: 144
Saturation voltage at rated current, V: 2.14
Maximum power dissipation, W: 330
Turn-off delay time (td (off)) at at 25 ° C, ns: 145
Operating temperature (Tj), ° C: -40…+175
Housing: to-247ac
quick view
4 550 ֏
3 270 ֏
×
from 15 pcs. — 3 250 ֏
IRGP4640DPBF, Transistor, IGBT, N-channel, 600V, 65A [TO-247AC]
Brand: Infineon
Technology / Family: Gen 6.2
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 65
Pulse collector current (Icm), A: 72
Saturation voltage at rated current, V: 1.9
Maximum power dissipation, W: 250
Turn-on delay time (td (on)) at at 25 ° C, ns: 41
Turn-off delay time (td (off)) at at 25 ° C, ns: 104
Operating temperature (Tj), ° C: -55…+175
Housing: to-247ac
quick view
4 070 ֏
2 920 ֏
×
from 15 pcs. — 2 880 ֏
IRGP50B60PD1PBF, Transistor, IGBT 600V 75A 150kHz [TO-247AC]
Brand: Infineon
Technology / Family: NPT
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 75
Pulse collector current (Icm), A: 150
Saturation voltage at rated current, V: 2.85
Maximum power dissipation, W: 390
Turn-on delay time (td (on)) at at 25 ° C, ns: 30
Turn-off delay time (td (off)) at at 25 ° C, ns: 130
Operating temperature (Tj), ° C: -55…+150
Housing: to-247ac
quick view
6 800 ֏
5 100 ֏
×
from 15 pcs. — 4 760 ֏
SGP02N120XKSA1 (GP02N120), Transistor IGBT 1200V 6.2A 62W [TO-220]
Brand: Infineon
Technology / Family: NPT
Built-in diode: no
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 6.2
Pulse collector current (Icm), A: 9.6
Saturation voltage at rated current, V: 3.6
Maximum power dissipation, W: 62
Turn-on delay time (td (on)) at at 25 ° C, ns: 23
Turn-off delay time (td (off)) at at 25 ° C, ns: 260
Operating temperature (Tj), ° C: -55…+150
Housing: pg-to-220-3-1
quick view
2 910 ֏
2 110 ֏
×
from 15 pcs. — 2 040 ֏
SGP07N120XKSA1 (GP07N120), IGBT transistor 1200V 8A 125W [TO-220]
Brand: Infineon
Technology / Family: NPT
Built-in diode: no
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 16.5
Pulse collector current (Icm), A: 27
Saturation voltage at rated current, V: 3.6
Maximum power dissipation, W: 125
Turn-on delay time (td (on)) at at 25 ° C, ns: 27
Turn-off delay time (td (off)) at at 25 ° C, ns: 440
Operating temperature (Tj), ° C: -55…+150
Housing: pg-to-220-3-1
quick view
2 850 ֏
1 930 ֏
×
from 15 pcs. — 1 920 ֏
SKW25N120FKSA1 (K25N120), IGBT transistor 1200V 25A 313W [TO-247]
Brand: Infineon
Technology / Family: NPT
Built-in diode: Yes
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 46
Pulse collector current (Icm), A: 84
Saturation voltage at rated current, V: 3.6
Maximum power dissipation, W: 313
Turn-on delay time (td (on)) at at 25 ° C, ns: 45
Turn-off delay time (td (off)) at at 25 ° C, ns: 730
Operating temperature (Tj), ° C: -55…+150
Housing: PG-TO247-3
quick view
12 600 ֏
9 400 ֏
×
from 15 pcs. — 9 300 ֏
AUIRGP50B60PD1, Auto IGBT 600V 75A 150kHz [TO-247AC] [EOL]
Brand: Infineon
Technology / Family: NPT
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 75
Pulse collector current (Icm), A: 150
Saturation voltage at rated current, V: 2.85
Maximum power dissipation, W: 390
Turn-on delay time (td (on)) at at 25 ° C, ns: 30
Turn-off delay time (td (off)) at at 25 ° C, ns: 130
Operating temperature (Tj), ° C: -55…+150
Housing: to-247ac
quick view
3 350 ֏ ×
from 15 pcs. — 3 330 ֏
IRG4BC20UD-SPBF, IGBT 600V 13A 8-60kHz, [D2-Pak]
Brand: IR
Technology / Family: Gen 4
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 13
Pulse collector current (Icm), A: 52
Saturation voltage at rated current, V: 2.1
Maximum power dissipation, W: 60
Turn-on delay time (td (on)) at at 25 ° C, ns: 39
Turn-off delay time (td (off)) at at 25 ° C, ns: 93
Operating temperature (Tj), ° C: -55…+150
Housing: d2pak
quick view
474 ֏ ×
from 15 pcs. — 462 ֏
IRG4BC30UDPBF, IGBT 600V 12A, [TO-220AB]
Brand: Infineon
Technology / Family: Gen 4
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 23
Pulse collector current (Icm), A: 92
Saturation voltage at rated current, V: 2.1
Maximum power dissipation, W: 100
Turn-on delay time (td (on)) at at 25 ° C, ns: 40
Turn-off delay time (td (off)) at at 25 ° C, ns: 91
Operating temperature (Tj), ° C: -55…+150
Housing: TO-220AB
quick view
900 ֏ ×
from 15 pcs. — 890 ֏
IRG4IBC20UD, IGBT 600V 11A TO220FP, transistor
Brand: IR
Technology / Family: Gen 4
Built-in diode: Yes
Maximum CE voltage, V: 600
Maximum CE current at 25 ° C, A: 11.4
Pulse collector current (Icm), A: 52
Saturation voltage at rated current, V: 2.1
Maximum power dissipation, W: 34
Turn-on delay time (td (on)) at at 25 ° C, ns: 39
Turn-off delay time (td (off)) at at 25 ° C, ns: 93
Operating temperature (Tj), ° C: -55…+150
Housing: to-220fp
quick view
269 ֏ ×
from 50 pcs. — 178 ֏
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