IRF9640STRLPbF, Transistor, P-channel 200V 11A [D2PAK]
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see technical documentation



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Description
Field effect transistor P-channel 200V 11A 125W
Technical parameters
Structure | p-channel | |
Maximum drain-source voltage Usi, V | 200 | |
Maximum drain-source current at 25 C Isi max..A | 11 | |
Maximum gate-source voltage Uzi max., V | 20 | |
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.5 Ohm / 6.6A, 10V | |
Maximum power dissipation Psi max..W | 125 | |
Slope of characteristic, S | 4.1 | |
Housing | D2PAK(2 Leads+Tab) | |
Weight, g | 2.5 | |
Technical documentation
Datasheet IRF9640SPBF
pdf, 192 КБ