IRLML0060TRPBF, Transistor N-MOSFET 60V 2.7A [SOT-23-3]

Photo 1/3 IRLML0060TRPBF, Transistor N-MOSFET 60V 2.7A [SOT-23-3]
Images are for reference only,
see technical documentation
SKU
9000970122
Brand
Structure
N-channel
Housing
Micro-3/SOT-23-3
Weight, g
0.05
All parameters
Datasheet
pdf, 818 КБ
All documents
16 pcs. from stock Yerevan, Today
8071 pcs. from the central warehouse, term 7 days
79 ֏
45 ֏
from 100 pcs.39 ֏
1 pcs. amount of 45 ֏
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Description

Field-effect N-channel transistor 60V 2.7A 1.25W, 0.116 ohms

Technical parameters

Structure N-channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 2.7
Maximum gate-source voltage Uzi max., V ±16
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.092 Ohm / 2.7A, 10V
Maximum power dissipation Psi max..W 1.25
Housing Micro-3/SOT-23-3
Weight, g 0.05

Technical documentation

Datasheet
pdf, 818 КБ
IRLML0060-SOT-23 d
pdf, 963 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP Today1 free
HayPost 2 May1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg