IRLML0060TRPBF, Transistor N-MOSFET 60V 2.7A [SOT-23-3]
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see technical documentation
see technical documentation



SKU
9000970122
Brand
Structure
N-channel
Housing
Micro-3/SOT-23-3
Weight, g
0.05
All parameters
Datasheet
pdf, 818 КБ
All documents
16 pcs. from stock Yerevan, Today
8071 pcs. from the central warehouse, term 7 days
79 ֏
45 ֏
from 100 pcs. —
39 ֏
1 pcs.
amount of 45 ֏
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Description
Field-effect N-channel transistor 60V 2.7A 1.25W, 0.116 ohms
Technical parameters
Structure | N-channel | |
Maximum drain-source voltage Usi, V | 60 | |
Maximum drain-source current at 25 C Isi max..A | 2.7 | |
Maximum gate-source voltage Uzi max., V | ±16 | |
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.092 Ohm / 2.7A, 10V | |
Maximum power dissipation Psi max..W | 1.25 | |
Housing | Micro-3/SOT-23-3 | |
Weight, g | 0.05 |
Technical documentation
Datasheet
pdf, 818 КБ
IRLML0060-SOT-23 d
pdf, 963 КБ
Delivery terms
Delivery to Yerevan
Office CHIP AND DIP | Today1 | free |
HayPost | 2 May1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg