Field effect transistors (FETs, MOSFETs) Hottech

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2N7002K, Transistor N-MOSFET 60V 0.3A [SOT-23-3] (2N7002K-T1-GE3)
6663 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
quick view
6663 pcs.
11 ֏ ×
from 100 pcs. — 10 ֏
BSS138, Transistor, N-channel, 50V, 0.22A [SOT-23-3] (=BSS138LT1G, BSS138-7-F)
2883 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.22
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.5 Ohm / 0.22A, 10V
Maximum power dissipation Psi max..W: 0.36
Slope of characteristic, S: 0.1
Housing: SOT-23-3
quick view
2883 pcs.
31 ֏
10 ֏
×
from 100 pcs. — 9 ֏
IRLML0060TRPBF, Transistor N-MOSFET 60V 2.7A [SOT-23-3]
7979 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 2.7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.092 Ohm / 2.7A, 10V
Maximum power dissipation Psi max..W: 1.25
Housing: Micro-3/SOT-23-3
quick view
7979 pcs.
79 ֏
45 ֏
×
from 100 pcs. — 39 ֏
IRLML2402TRPBF, Transistor N-MOSFET 20V 1.22A [SOT-23-3]
2790 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 1.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.25 Ohm / 0.93A, 4.5V
Maximum power dissipation Psi max..W: 0.54
Slope of characteristic, S: 1.3
Housing: Micro-3/SOT-23-3
quick view
2790 pcs.
110 ֏
39 ֏
×
from 100 pcs. — 34 ֏
IRLML6402TRPBF, Transistor, P-channel 20V 3.78A logic [Micro3 / SOT-23]
20524 pcs.
Brand: Hottech
Structure: P-channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 3.78
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.065 Ohm / 3.7A, 4.5V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 6
Housing: Micro-3/SOT-23-3
quick view
20524 pcs.
21 ֏ ×
from 100 pcs. — 19 ֏
IRLML9301TRPBF, Transistor, P-channel 30V 3.6A [SOT-23-3]
15356 pcs.
Brand: Hottech
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 3.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.051 ohm/3.6A/10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 3.5
Housing: SOT-23-3
quick view
15356 pcs.
134 ֏
50 ֏
×
from 100 pcs. — 43 ֏
IRLML0030TRPBF, N-MOSFET Transistor 30V 5.3A 1.3W 0.04Ohm [SOT-23-3.]
7 days, 9912 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.027 Ohm / 5.2A, 10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 9.5
Housing: SOT-23-3
quick view
7 days,
9912 pcs.
59 ֏ ×
from 100 pcs. — 51 ֏
IRLML0040TRPBF, N-MOSFET 40V 3.6A [SOT-23-3]
7 days, 9994 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 3.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.056 Ohm / 3.6A, 10V
Maximum power dissipation Psi max..W: 1.3
Housing: Micro-3/SOT-23-3
quick view
7 days,
9994 pcs.
122 ֏
43 ֏
×
from 100 pcs. — 37 ֏
IRLML0100TRPBF, N-MOSFET 100V 1.6A 1.3W [SOT-23-3]
7 days, 12683 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 1.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.22 Ohm / 1.6A, 10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 5.7
Housing: SOT-23-3
quick view
7 days,
12683 pcs.
60 ֏ ×
from 100 pcs. — 53 ֏
IRLML2246TRPBF, Transistor P-MOSFET 20V 2.6A 1.3W [SOT-23-3]
7 days, 6324 pcs.
Brand: Hottech
Structure: P-channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 2.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.135 Ohm / 2.6A, 4.5V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 3.4
Housing: SOT-23-3
quick view
7 days,
6324 pcs.
46 ֏ ×
from 100 pcs. — 40 ֏
IRLML2502TRPBF, Transistor N-MOSFET 20V 4.2A [SOT-23-23]
7 days, 12631 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 4.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.045 Ohm / 4.2A, 4.5V
Maximum power dissipation Psi max..W: 1.25
Slope of characteristic, S: 5.8
Housing: Micro-3/SOT-23-3
quick view
7 days,
12631 pcs.
39 ֏ ×
from 100 pcs. — 33 ֏
IRLML2803TRPBF, N-MOSFET 30V 1.2A 0.54W [SOT-23-3]
7 days, 13326 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 1.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.025 Ohms/0.91A, 10V
Maximum power dissipation Psi max..W: 0.54
Slope of characteristic, S: 0.87
Housing: SOT-23-3
quick view
7 days,
13326 pcs.
39 ֏ ×
from 100 pcs. — 33 ֏
IRLML5103TRPBF, Transistor, P-channel 30V 0.76A [SOT-23-3]
7 days, 5361 pcs.
Brand: Hottech
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 0.76
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.6 Ohm / 0.6A, 10V
Maximum power dissipation Psi max..W: 0.54
Slope of characteristic, S: 0.44
Housing: Micro-3/SOT-23-3
quick view
7 days,
5361 pcs.
52 ֏ ×
from 100 pcs. — 46 ֏
IRLML5203TRPBF, Transistor P-MOSFET 30V 3A 1.25W [SOT-23-3]
7 days, 8263 pcs.
Brand: Hottech
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.098 Ohm / 3A, 10V
Maximum power dissipation Psi max..W: 1.25
Slope of characteristic, S: 3.1
Housing: SOT-23-3
quick view
7 days,
8263 pcs.
45 ֏ ×
from 100 pcs. — 39 ֏
IRLML6244TRPBF, N-MOSFET Transistor 20V 6.3A 1.3W [SOT-23-3]
7 days, 6618 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 6.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.024 ohms/6.3A, 4.5V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 17
Housing: SOT-23-3
quick view
7 days,
6618 pcs.
41 ֏ ×
from 100 pcs. — 36 ֏
IRLML6302TRPBF, P-MOSFET Transistor 16V 0.78A 0.54W [SOT-23-3]
7 days, 10376 pcs.
Brand: Hottech
Structure: P-channel
Maximum drain-source voltage Usi, V: 16
Maximum drain-source current at 25 C Isi max..A: 0.78
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.06 Ohm/0.61A, 10V
Maximum power dissipation Psi max..W: 0.54
Slope of characteristic, S: 0.56
Housing: SOT-23-3
quick view
7 days,
10376 pcs.
38 ֏ ×
from 100 pcs. — 33 ֏
IRLML6344TRPBF, N-MOSFET 30V 5A 1.3W [SOT-23-3]
7 days, 28713 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.029 Ohm / 5A, 4.5V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 19
Housing: SOT-23-3
quick view
7 days,
28713 pcs.
41 ֏ ×
from 100 pcs. — 36 ֏
IRLML6346TRPBF, N-MOSFET Transistor 30V 3.4A 1.3W [SOT-23-3]
7 days, 14661 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 3.4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.063 Ohm/3.4A, 10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 9.5
Housing: SOT-23-3
quick view
7 days,
14661 pcs.
39 ֏ ×
from 100 pcs. — 34 ֏
IRLML6401TRPBF, Transistor P-MOSFET 12V 4.3A [SOT-23-3] (IRLML6401TRPBF)
7 days, 6955 pcs.
Brand: Hottech
Structure: P-channel
Maximum drain-source voltage Usi, V: 12
Maximum drain-source current at 25 C Isi max..A: 4.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.05 Ohm / 4.3A, 4.5V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 8.6
Housing: Micro-3/SOT-23-3
quick view
7 days,
6955 pcs.
32 ֏ ×
from 100 pcs. — 27 ֏
AO3401A, 30V 4A P-MOSFET Transistor [SOT-23-3.]
2 weeks, 29 pcs.
Brand: Hottech
quick view
2 weeks,
29 pcs.
21 ֏ ×
from 5 pcs. — 18 ֏
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